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TGAN30N60FDR - Field Stop Trench IGBT

Key Features

  • 600V Field Stop Trench Technology.
  • High Speed Switching.
  • Low Conduction Loss.
  • Positive Temperature Coefficient.
  • Easy Parallel Operation.
  • Short Circuit Withstanding Time 5μs.
  • RoHS Compliant.
  • JEDEC Qualification.

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Datasheet Details

Part number TGAN30N60FDR
Manufacturer TRinno
File Size 0.97 MB
Description Field Stop Trench IGBT
Datasheet download datasheet TGAN30N60FDR Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation • Short Circuit Withstanding Time 5μs • RoHS Compliant • JEDEC Qualification Applications : UPS, Welder, Inverter, Solar TGAN30N60FDR Field Stop Trench IGBT E GC Device TGAN30N60FDR Package TO-3PN Marking TGAN30N60FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF PD