TMD3N50AZG Features
* Low gate charge
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant
* Halogen free package
* JEDEC Qualification
* Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W I-PAK Device TMD3N50AZ
Datasheet Details
TMD3N50AZG, TMD3N50AZ
TRinno
444.26 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: TMD3N50AZG, TMD3N50AZ.
Please refer to the document for exact specifications by model.
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