TMD0507-2 Datasheet, Mmic, Toshiba

PDF File Details

Part number:

TMD0507-2

Manufacturer:

Toshiba ↗

File Size:

203.20kb

Download:

📄 Datasheet

Description:

Power gaas mmic.

Datasheet Preview: TMD0507-2 📥 Download PDF (203.20kb)
Page 2 of TMD0507-2

TAGS

TMD0507-2
Power
GaAs
MMIC
Toshiba

📁 Related Datasheet

TMD0507-2A - Microwave Power GaAs MMIC (Toshiba)
.

TMD0708-2 - POWER GAAS MMIC (Toshiba Semiconductor)
.

TMD1013-1 - MICROWAVE POWER MMIC AMPLIFIER (Toshiba Semiconductor)
.. .

TMD1013-1-431 - Microwave Power MMIC Amplifier (Toshiba)
MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 FEATURES ・BROAD BAND INTERNALLY MATCHED ・HIGH POWER P1dB= 33.0dBm at 9.5GHz to 12.0GHz ・HIGH GAIN G1dB= 2.

TMD1414-2C - MICROWAVE POWER MMIC AMPLIFIER (Toshiba Semiconductor)
.. MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz.

TMD16N25Z - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification D-PAK TM.

TMD16N25ZG - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification D-PAK TM.

TMD18N20Z - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification D-PAK TM.

TMD18N20ZG - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification D-PAK TM.

TMD1925-3 - Microwave Power MMIC Amplifier (Toshiba)
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TMD1925-3 TMD1925-3 Preliminary „ „ Suitable for Digital Communicat.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts