TMD5872-2 Datasheet, Amplifier, Toshiba

TMD5872-2 Features

  • Amplifier n n High Power P1dB=34dBm(TYP.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP.) Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATI

PDF File Details

Part number:

TMD5872-2

Manufacturer:

Toshiba ↗

File Size:

75.43kb

Download:

📄 Datasheet

Description:

Microwave power mmic amplifier.

Datasheet Preview: TMD5872-2 📥 Download PDF (75.43kb)
Page 2 of TMD5872-2

TMD5872-2 Application

  • Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

TAGS

TMD5872-2
Microwave
Power
MMIC
Amplifier
Toshiba

📁 Related Datasheet

TMD5872-2-321 - Microwave Power MMIC Amplifier (Toshiba)
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7d.

TMD54HC373 - (TMDx4HC37x) 3 State Octal D-Flip-Flops (Telmos)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

TMD54HC374 - (TMDx4HC37x) 3 State Octal D-Flip-Flops (Telmos)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

TMD54HCT373 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops (Telmos)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

TMD54HCT374 - (TMDx4HCT37x) 3 State Octal D-Flip-Flops (Telmos)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

TMD54X110CBB - TFT Module (Hitachi)
Hitachi Displays, Ltd. Date; May. 29, 2009 TECHNICAL DATA TMD54X110CBB CONTENTS No. Item — COVER — RECORD OF REVISION — APPLICATION — DESCRIPTION .

TMD5N40ZG - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance.

TMD5N50 - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification  Fast re.

TMD5N50G - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification  Fast re.

TMD5N60AZ - N-channel MOSFET (TRinno)
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS pliant  Halogen free package  JEDEC Qualification  Improve.

Stock and price

Toshiba America Electronic Components
Microwave Power MMIC Amplifier 58 GHz to 72 GHz 30 C to 80 C 10 Pins 29E1F (Alt: TMD5872-2)
EBV Elektronik
TMD5872-2
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts