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TMD5872-2-321 Microwave Power MMIC Amplifier

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Description

MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA .

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Applications

* High Power P1dB=31.7dBm(MIN. ) High Power Added Efficiency ηadd=21%(TYP. ) n n TMD5872-2-321 High Gain G1dB=26.7dB(MIN. ) Broadband Operation f=5.8-6.475GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATUR

TMD5872-2-321 Distributors

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Microwave Power MMIC Amplifier Toshiba
Toshiba TMD5872-2-321-like datasheet