Part number:
TMD1013-1-431
Manufacturer:
File Size:
449.23 KB
Description:
Microwave power mmic amplifier.
* ・BROAD BAND INTERNALLY MATCHED ・HIGH POWER P1dB= 33.0dBm at 9.5GHz to 12.0GHz ・HIGH GAIN G1dB= 25.0dB at 9.5GHz to 12.0GHz ・HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gai
TMD1013-1-431 Datasheet (449.23 KB)
TMD1013-1-431
449.23 KB
Microwave power mmic amplifier.
📁 Related Datasheet
TMD1013-1 - MICROWAVE POWER MMIC AMPLIFIER
(Toshiba Semiconductor)
..
.
TMD1414-2C - MICROWAVE POWER MMIC AMPLIFIER
(Toshiba Semiconductor)
..
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA
TMD1414-2C
FEATURES
n HIGH POWER P1dB=34.5dBm at 13.75GHz.
TMD16N25Z - N-channel MOSFET
(TRinno)
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS pliant Halogen free package JEDEC Qualification
D-PAK
TM.
TMD16N25ZG - N-channel MOSFET
(TRinno)
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS pliant Halogen free package JEDEC Qualification
D-PAK
TM.
TMD18N20Z - N-channel MOSFET
(TRinno)
Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS pliant Halogen free package JEDEC Qualification
D-PAK
TM.
TMD18N20ZG - N-channel MOSFET
(TRinno)
Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS pliant Halogen free package JEDEC Qualification
D-PAK
TM.
TMD1925-3 - Microwave Power MMIC Amplifier
(Toshiba)
MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TMD1925-3 TMD1925-3
Preliminary
Suitable for Digital Communicat.
TMD0507-2 - Power GaAs MMIC
(Toshiba)
.