TMD1414-2C Datasheet - Toshiba Semiconductor

TMD1414-2C, MICROWAVE POWER MMIC AMPLIFIER

www.DataSheet4U.com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C .

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TMD1414-2C_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TMD1414-2C

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

69.77 KB

Description:

MICROWAVE POWER MMIC AMPLIFIER

Features

* n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Tempera

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

TMD1414-2C Distributors

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