1N4148D2B
SILICON EPITAXIAL PLANAR DIODE
1N4148D2A / 1N4148D2B
- Low Leakage
- Fast Switching
- Low Forward Voltage
- Hermetic Ceramic Surface Mount Package
- Suitable for general purpose, switching applications.
- Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Breakdown Voltage
100V
VRWM Working Peak Reverse Voltage
75V
Average Rectified Output Current, TA = 75°C(1)
200m A
IFSM
Surge Current, half sine wave, tp = 8.3ms(2)
2A
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
(1) IO is rated at 200m A @ TA = 75°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(Max) does not exceed 175°C
(2) TA = 25°C @ IO=0 and VRWM for ten 8.3m S surges at 1 minute intervals.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by...
