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1N4148D2B - SILICON EPITAXIAL PLANAR DIODE

This page provides the datasheet information for the 1N4148D2B, a member of the 1N4148D2A SILICON EPITAXIAL PLANAR DIODE family.

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Datasheet Details

Part number 1N4148D2B
Manufacturer TT
File Size 201.49 KB
Description SILICON EPITAXIAL PLANAR DIODE
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Full PDF Text Transcription

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SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • Low Leakage • Fast Switching • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for general purpose, switching applications. • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VBR Breakdown Voltage 100V VRWM Working Peak Reverse Voltage 75V IO Average Rectified Output Current, TA = 75°C(1) 200mA IFSM Surge Current, half sine wave, tp = 8.
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