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SILICON EPITAXIAL PLANAR DIODE
1N4148D2A / 1N4148D2B
• Low Leakage • Fast Switching • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for general purpose, switching applications. • Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VBR
Breakdown Voltage
100V
VRWM Working Peak Reverse Voltage
75V
IO
Average Rectified Output Current, TA = 75°C(1)
200mA
IFSM
Surge Current, half sine wave, tp = 8.
1N4148D2A Datasheet
