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SILICON EPITAXIAL PLANAR DIODE
1N4148CSM
• Low Leakage • Fast Switching • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for general purpose, switching applications. • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VBR
Breakdown Voltage
100V
VRWM Working Peak Reverse Voltage
75V
IO(1)
Average Rectified Output Current, TA = 75°C
200mA
IFSM
Surge Current, half sine wave, tp = 8.3ms
2A
PD(1)
Total Power Dissipation at TA = 75°C
385mW
Derate Above 75°C
3.08mW/°C
PD
Total Power Dissipation at TSP = 75°C
1.042W
Derate Above 75°C
8.
1N4148CSM Datasheet
