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1N4148D2B - SILICON EPITAXIAL PLANAR DIODE

Download the 1N4148D2B datasheet PDF. This datasheet also covers the 1N4148D2A variant, as both devices belong to the same silicon epitaxial planar diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (1N4148D2A-TT.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • Low Leakage • Fast Switching • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for general purpose, switching applications. • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VBR Breakdown Voltage 100V VRWM Working Peak Reverse Voltage 75V IO Average Rectified Output Current, TA = 75°C(1) 200mA IFSM Surge Current, half sine wave, tp = 8.