1N4148D2B Datasheet | TT Electronics

SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B - Low Leakage - Fast Switching - Low Forward Voltage - Hermetic Ceramic Surface Mount Package - Suitable for general purpose, switching applications. - Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Breakdown Voltage 100V VRWM Working Peak Reverse Voltage 75V Average Rectified Output Current, TA = 75°C(1) 200m A IFSM Surge Current, half sine wave, tp = 8.3ms(2) 2A Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C (1) IO is rated at 200m A @ TA = 75°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(Max) does not exceed 175°C (2) TA = 25°C @ IO=0 and VRWM for ten 8.3m S surges at 1 minute intervals. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt. Document Number 8271 Website: http://.semelab-tt. Issue 2 Page 1 of 4 SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B THERMAL PROPERTIES Symbol RθJA Parameter Thermal Resistance Junction to...