Datasheet4U Logo Datasheet4U.com

2SB852 - Transistor

Datasheet Summary

Features

  • s.
  • Darlington connection for high DC current gain.
  • Built-in 4kΩ resistor between base and emitter. +0.1 2.4-0.1 +0.1 1.3-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 C 0.4 3 +0.05 0.1-0.01 B +0.1 0.97-0.1 1 Base 2 Emitter RBE 4kΩ +0.1 0.38-0.1 E.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation(TOTAL) Juncti.

📥 Download Datasheet

Datasheet preview – 2SB852

Datasheet Details

Part number 2SB852
Manufacturer TY Semiconductor
File Size 170.08 KB
Description Transistor
Datasheet download datasheet 2SB852 Datasheet
Additional preview pages of the 2SB852 datasheet.

📁 Similar Datasheet

  • 2SB852K - High-gain Amplifier Transistor (Rohm)
  • 2SB850 - PNP Transistor (INCHANGE)
  • 2SB850 - GENERAL PURPOSE POWER AMPLIFIER (New Jersey Semi-Conductor)
  • 2SB851 - PNP Silicon Transistor (Rohm)
  • 2SB855 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB855 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SB856 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB856 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB856 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SB857 - Silicon PNP Transistor (Hitachi Semiconductor)
Other Datasheets by TY Semiconductor

Full PDF Text Transcription

Click to expand full text
Product specification 2SB852 ■ Features ● Darlington connection for high DC current gain. ● Built-in 4kΩ resistor between base and emitter. +0.1 2.4-0.1 +0.1 1.3-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 C 0.4 3 +0.05 0.1-0.01 B +0.1 0.97-0.1 1 Base 2 Emitter RBE 4kΩ +0.1 0.38-0.
Published: |