2SB850 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SB850 PNP Transistor

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1. Wi.

2SB850-INCHANGE.pdf

2SB850 Datasheet Preview — Preview of 2SB850 PDF

Datasheet Details

Part number:

2SB850

Manufacturer:

INCHANGE

File Size:

208.70 KB

Description:

PNP Transistor

Applications

* Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Contin

2SB850 Distributors

📁 Related Datasheet

2SB851 2SB852 2SB852K 2SB855 2SB856 2SB857

📌 All Tags

2SB850 PNP Transistor INCHANGE

INCHANGE 2SB850-like datasheet