2SB850 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1. Wi.

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Datasheet Specifications

Part number: 2SB850
Manufacturer: INCHANGE
File Size: 208.70 KB
Datasheet: 2SB850-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Contin

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2SB850 PNP Transistor INCHANGE

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