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2SB850 - PNP Transistor

2SB850 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1. Wi.

2SB850 Applications

* Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Contin

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Datasheet Details

Part number
2SB850
Manufacturer
INCHANGE
File Size
208.70 KB
Datasheet
2SB850-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB850-like datasheet