2SB816 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB816 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

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Datasheet Specifications

Part number: 2SB816
Manufacturer: INCHANGE
File Size: 215.76 KB
Datasheet: 2SB816-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for LF power amplifier, 50W output large power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous

2SB816 Distributors

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2SB816 PNP Transistor INCHANGE

INCHANGE 2SB816-like datasheet