* q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* (Ta=25˚C
2SB819
Panasonic Semiconductor
47.39 KB
Silicon pnp transistor.
Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD1051
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.
📁 Related Datasheet
2SB810 - PNP SILICON TRANSISTOR
(NEC)
.
2SB812 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB812
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement .
2SB812 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB812
DESCRIPTION ·With TO-3PN package ·Wide area .
2SB813 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB813
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Power D.
2SB815 - PNP / NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number : ENN694F
2SB815 / 2SD1048
PNP / NPN Epitaxial Planar Silicon Transistors
2SB815 / 2SD1048
General-Purpose AF Amplifier Applications
.
2SB815 - Bipolar Transistor
(ON Semiconductor)
Bipolar Transistor
(−)15 V, (−)0.7 A, Low VCE(sat), (PNP)NPN Single CP
2SB815, 2SD1048
Features
• Ultrasmall Package Allows Miniaturization in End Pr.
2SB815 - Transistor
(Kexin)
SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SB815
SOT-23
Unit: mm
Features
Ultrasmall package allows miniaturization in end pr.
2SB816 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Application.
