2SB817 - PNP Epitaxial Planar Silicon Transistors
in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047.
1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vo
2SB817 Features
* Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
* Wide ASO because of on-chip ballast resistance.
* Good depenedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD
