2SB817 Datasheet - Sanyo Semicon Device

2SB817 PNP Epitaxial Planar Silicon Transistors

in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vo.

2SB817 Features

* Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).

* Wide ASO because of on-chip ballast resistance.

* Good depenedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD

2SB817_SanyoSemiconDevice.pdf