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2SB812 - PNP Transistor

2SB812 Description

isc Silicon PNP Power Transistor 2SB812 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High Power Dissipation. Complement to Type 2SD1032. Minimum Lot-to-Lot va.

2SB812 Applications

* Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB812
Manufacturer
INCHANGE
File Size
216.03 KB
Datasheet
2SB812-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB812-like datasheet