2SB817C - Bipolar Transistor

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ON Semiconductor

Part number	2SB817C
Manufacturer	ON Semiconductor
File Size	168.34 KB
Description	Bipolar Transistor
Datasheet	2SB817C Datasheet
Additional preview pages of the 2SB817C datasheet.

Large current capacitance.
Wide SOA and high durability against breakdown.
Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings -160 -140 --6 --12 --20 2.5 120 150 --55 to +1.

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Published: May 5, 2014 |