2SB1122 - Bipolar Transistor

Product Overview

ON Semiconductor

Part number	2SB1122
Manufacturer	ON Semiconductor
File Size	163.71 KB
Description	Bipolar Transistor
Datasheet	2SB1122 Datasheet
Additional preview pages of the 2SB1122 datasheet.

Adoption of FBET process.
Ultrasmall size making it easy to provide high-density hybrid IC’s Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings Unit --60 V --50 V --5 V --1 A --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are st.

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Published: May 31, 2015 |