2SB1201 - Bipolar Transistor

Datasheet Summary

Adoption of FBET, MBIT processes.
Large current capacitance and wide ASO.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Speciﬁcations ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP.

ON Semiconductor

Part number	2SB1201
Manufacturer	ON Semiconductor
File Size	313.95 KB
Description	Bipolar Transistor
Datasheet	2SB1201 Datasheet
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Other Datasheets by ON Semiconductor

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Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.

Published: Apr 2, 2015 |