* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity.
* Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter
2SB1127
Sanyo Semicon Device
90.86 KB
Pnp transistor.
Ordering number:2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications Strobe, power supplies, relay .
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