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2SB1127 - PNP Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SB1127
Manufacturer	Sanyo Semicon Device
File Size	90.86 KB
Description	PNP Transistor
Datasheet	2SB1127_SanyoSemiconDevice.pdf

2SB1127 Product details

Features

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Electrical Chara.

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Other Datasheets by Sanyo Semicon Device

2SB1120 - PNP Transistor
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Published: Mar 22, 2005 |