* High DC current gain (4000 or greater).
* Large current capacity.
* Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter V
2SB1126
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Pnp / npn epitaxial planar silicon transistors.
2SB1126 / 2SD1626 Ordering number : EN1721B 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications <.
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