2SB817E Datasheet - TAITRON

2SB817E Power Transistor

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate .

2SB817E Features

* 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram TO-3P Maximum Ratings (T Ambient=25ºC unless noted otherwise)

2SB817E_TAITRON.pdf