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2SB813 Datasheet - INCHANGE

2SB813 - PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *Good Linearity of hFE *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=

2SB813-INCHANGE.pdf

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Datasheet Details

Part number:

2SB813

Manufacturer:

INCHANGE

File Size:

208.12 KB

Description:

Pnp transistor.

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