2SB813 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB813 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variati.

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Datasheet Specifications

Part number: 2SB813
Manufacturer: INCHANGE
File Size: 208.12 KB
Datasheet: 2SB813-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

2SB813 Distributors

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2SB813 PNP Transistor INCHANGE

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