2SB813 Datasheet, Transistor, INCHANGE

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2SB813

INCHANGE

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Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *Good Linearity of hFE *High Power Dissipation *Minimum Lot-to-Lot variat

Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U

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2SB813 PNP Transistor INCHANGE