2SB813 Datasheet - INCHANGE

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2SB813 PNP Transistor

isc Silicon PNP Power Transistor 2SB813 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variati.

2SB813-INCHANGE.pdf

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Datasheet Details

Part number:

2SB813

Manufacturer:

INCHANGE

File Size:

208.12 KB

Description:

PNP Transistor

Applications

* Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

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