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2SB813 - PNP Transistor

2SB813 Description

isc Silicon PNP Power Transistor 2SB813 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variati.

2SB813 Applications

* Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB813
Manufacturer
INCHANGE
File Size
208.12 KB
Datasheet
2SB813-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB813-like datasheet