Datasheet4U Logo Datasheet4U.com

2SB823 - PNP Transistor

2SB823 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB823 .
Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min). Low Collector Saturation Voltage : VCE(sat)= -1. Wide Area of.

2SB823 Applications

* Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IC

📥 Download Datasheet

Preview of 2SB823 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB823
Manufacturer
INCHANGE
File Size
183.96 KB
Datasheet
2SB823-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB821 - Silicon PNP Power Transistors (Inchange Semiconductor)
  • 2SB822 - Medium power Transistor (Rohm)
  • 2SB824 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB825 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB826 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB827 - PNP/NPN Epitaxial Planar Silicon Tranasistors (Sanyo Semicon Device)
  • 2SB828 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB829 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB823-like datasheet