2SB823 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB823 .
Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min). Low Collector Saturation Voltage : VCE(sat)= -1. Wide Area of.

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Datasheet Specifications

Part number: 2SB823
Manufacturer: INCHANGE
File Size: 183.96 KB
Datasheet: 2SB823-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IC

2SB823 Distributors

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2SB823 PNP Transistor INCHANGE

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