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2SB823 - PNP Transistor

2SB823 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB823 .
Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min). Low Collector Saturation Voltage : VCE(sat)= -1. Wide Area of.

2SB823 Applications

* Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IC

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Datasheet Details

Part number
2SB823
Manufacturer
INCHANGE
File Size
183.96 KB
Datasheet
2SB823-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB823-like datasheet