2SB821 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB821 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). Good Linearity of hFE. Low Saturation Voltage APPLICATIONS. Designe.

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Datasheet Specifications

Part number: 2SB821
Manufacturer: Inchange Semiconductor
File Size: 141.95 KB
Datasheet: 2SB821-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for use in audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Contin

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2SB821 Silicon PNP Power Transistors Inchange Semiconductor

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