2SB829 Datasheet, Transistors, Sanyo Semicon Device

✔ 2SB829 Features

Low-saturation collector-to-emitter voltage : VCE(sat) =
0.5V max.
Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065

Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching ap

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2SB829

Sanyo Semicon Device

116.84 KB

Pnp/npn epitaxial planar silicon transistors.

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