2SB829 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SB829
Manufacturer	Sanyo Semicon Device
File Size	116.84 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SB829_SanyoSemiconDevice.pdf

Low-saturation collector-to-emitter voltage : VCE(sat) =.
0.5V max.
Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065] ( ) : 2SB829 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Elec.

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Published: Mar 22, 2005 |