2SB827 - PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB827 Features
* Low collector-to-emitter saturation voltage : VCE(sat)=(
* )0.4V max.
* Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base
