2SB827 - PNP/NPN Epitaxial Planar Silicon Tranasistors

Product Overview

Sanyo Semicon Device

Part number	2SB827
Manufacturer	Sanyo Semicon Device
File Size	100.34 KB
Description	PNP/NPN Epitaxial Planar Silicon Tranasistors
Datasheet	2SB827 Datasheet
Additional preview pages of the 2SB827 datasheet.

Low collector-to-emitter saturation voltage : VCE(sat)=(.
)0.4V max.
Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc.

📁 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |