2SB828 - PNP/NPN Epitaxial Planar Silicon Transistors

Product Overview

Sanyo Semicon Device

Part number	2SB828
Manufacturer	Sanyo Semicon Device
File Size	102.42 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SB828 Datasheet
Additional preview pages of the 2SB828 datasheet.

Low-saturation collector-to-emitter voltage : VCE(sat)=.
0.5V(PNP), 0.4V(NPN) max.
Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP P.

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Published: Mar 22, 2005 |