* Low-saturation collector-to-emitter voltage : VCE(sat)=
* 0.5V(PNP), 0.4V(NPN) max.
* Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
2SB828
Sanyo Semicon Device
102.42 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications Relay drivers, h.
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