2SB828 - PNP/NPN Epitaxial Planar Silicon Transistors
2SB828 Features
* Low-saturation collector-to-emitter voltage : VCE(sat)=
* 0.5V(PNP), 0.4V(NPN) max.
* Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
