2SB826 Datasheet, Transistors, Sanyo Semicon Device

✔ 2SB826 Features

Low-saturation collector-to-emitter voltage : VCE(sat)=
0.5V (PNP), 0.4V (NPN) max.
Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010

Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching ap

Sanyo Semicon Device manufacturer logo

2SB826

Sanyo Semicon Device

102.00 KB

Pnp/npn epitaxial planar silicon transistors.

📁 Related Datasheet

2SB821 - Silicon PNP Power Transistors (Inchange Semiconductor)

2SB822 - Medium power Transistor (Rohm)

2SB823 - PNP Transistor (INCHANGE)

2SB824 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

2SB824 - SILICON POWER TRANSISTOR (SavantIC)

2SB824 - PNP SILICON TRANSISTOR (UTC)

2SB824 - PNP Transistor (INCHANGE)

2SB825 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

TAGS