2SB817 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe Operat.

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Datasheet Specifications

Part number: 2SB817
Manufacturer: Inchange Semiconductor
File Size: 222.29 KB
Datasheet: 2SB817_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A

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2SB817 Silicon PNP Power Transistor Inchange Semiconductor

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