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2SB817 Datasheet - Inchange Semiconductor

2SB817 Silicon PNP Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) *Good Linearity of hFE *High Current Capability *Wide Area of Safe Operation *Complement to Type 2SD1047 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Recomme.

2SB817_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB817

Manufacturer:

Inchange Semiconductor

File Size:

222.29 KB

Description:

Silicon pnp power transistor.

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2SB817 2SB817 Silicon PNP Power Transistor Inchange Semiconductor

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