Datasheet Details
- Part number
- 2SB817
- Manufacturer
- Inchange Semiconductor
- File Size
- 222.29 KB
- Datasheet
- 2SB817_InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistor
2SB817 Description
isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min).
Good Linearity of hFE.
High Current Capability.
Wide Area of Safe Operat.
2SB817 Applications
* Recommend for 60W audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
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