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2SB859 Silicon PNP Power Transistor

2SB859 Description

isc Silicon PNP Power Transistor 2SB859 .
Collector Current: IC= -4A. Low Collector Saturation Voltage : VCE(sat)= -2. High Collector Power Dissipation. Comple.

2SB859 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Cu

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Datasheet Details

Part number
2SB859
Manufacturer
Inchange Semiconductor
File Size
217.71 KB
Datasheet
2SB859_InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SB859-like datasheet