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2SB834 Datasheet - Inchange Semiconductor

2SB834 Silicon PNP Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A *Complementary to 2SD880 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in.

2SB834_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB834

Manufacturer:

Inchange Semiconductor

File Size:

218.17 KB

Description:

Silicon pnp power transistors.

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2SB834 2SB834 Silicon PNP Power Transistors Inchange Semiconductor

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