Datasheet Details
- Part number
- 2SB834
- Manufacturer
- Inchange Semiconductor
- File Size
- 218.17 KB
- Datasheet
- 2SB834_InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistors
2SB834 Description
isc Silicon PNP Power Transistor 2SB834 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min).
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.
2SB834 Applications
* Designed for use in audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3.0
A
IB
Ba
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