2SB834 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SB834 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

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Datasheet Specifications

Part number: 2SB834
Manufacturer: Inchange Semiconductor
File Size: 218.17 KB
Datasheet: 2SB834_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3.0 A IB Ba

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2SB834 Silicon PNP Power Transistors Inchange Semiconductor

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