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2SB855 - Silicon PNP Power Transistor

2SB855 Description

isc Silicon PNP Power Transistor 2SB855 .
Collector Current: IC= -2A. Low Collector Saturation Voltage : VCE(sat)= -1. High Collector Power Dissipation. Minimu.

2SB855 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipatio

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Datasheet Details

Part number
2SB855
Manufacturer
Inchange Semiconductor
File Size
216.80 KB
Datasheet
2SB855_InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SB855-like datasheet