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2SB881 Datasheet - Inchange Semiconductor

2SB881 Silicon PNP Power Transistor

*High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A *Wide Area of Safe Operation *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A *Complement to Type 2SD1191 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT.

2SB881-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB881

Manufacturer:

Inchange Semiconductor

File Size:

215.49 KB

Description:

Silicon pnp power transistor.

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2SB881 2SB881 Silicon PNP Power Transistor Inchange Semiconductor

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