2SB881 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= -3. Wide Area of Safe Operation. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -.

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Datasheet Specifications

Part number: 2SB881
Manufacturer: Inchange Semiconductor
File Size: 215.49 KB
Datasheet: 2SB881-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector

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2SB881 Silicon PNP Power Transistor Inchange Semiconductor

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