2SB848 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB848 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Good Linearity of hFE. 100% avalanche tested. Minimum Lot-to-Lot variati.

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Datasheet Specifications

Part number: 2SB848
Manufacturer: INCHANGE
File Size: 188.49 KB
Datasheet: 2SB848-INCHANGE.pdf
Description: PNP Transistor

Applications

* Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current Puls

2SB848 Distributors

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2SB848 PNP Transistor INCHANGE

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