2SB817C PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817C .
Low Collector Saturation Voltage- : VCE(sat)= -2. Good Linearity of hFE. High Current Capability. Wide Area of Safe.

📥 Download Datasheet

2SB817C Datasheet Preview — Preview of 2SB817C PDF

Datasheet Specifications

Part number: 2SB817C
Manufacturer: INCHANGE
File Size: 191.95 KB
Datasheet: 2SB817C-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP C

2SB817C Distributors

📁 Related Datasheet

2SB817 2SB817E 2SB810 2SB815 2SB816 2SB819

📌 All Tags

2SB817C PNP Transistor INCHANGE

INCHANGE 2SB817C-like datasheet