2SB817E PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817E .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe O.

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Datasheet Specifications

Part number: 2SB817E
Manufacturer: INCHANGE
File Size: 191.21 KB
Datasheet: 2SB817E-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP C

2SB817E Distributors

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2SB817E PNP Transistor INCHANGE

INCHANGE 2SB817E-like datasheet