* q q 2.6±0.1 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC
* Tj Tstg Symbol VCBO (Ta=25˚C) Ratings
* 30
* 60
* 25
* 50
* 5
* 1.5
* 1 1 150
* 55 ~ +150 1cm2 Uni
2SB0766
Panasonic Semiconductor
39.51 KB
Silicon pnp epitaxial planer type transistor.
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s F.
📁 Related Datasheet
2SB0766A - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s F.
2SB0709A - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forw.
2SB0710 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
.
2SB0710A - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
.
2SB0774 - Silicon PNP epitaxial planar type Transistors
(Panasonic)
Transistor
2SB0774 (2SB774)
Silicon PNP epitaxial planer type
For low-frequency amplification
I Features
G High emitter to base voltage VEBO. G Protec.
2SB030070MLJY - 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
(Silan Microelectronics)
2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial.
2SB035030MLJY - 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
(Silan Microelectronics)
2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon ep.
2SB035100ML - 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
(Silan Microelectronics)
2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxia.
