2SB0967 Datasheet - Panasonic

2SB0967 Silicon PNP epitaxial planar type power transistor

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage www.DataSheet4U.co.

2SB0967 Features

* Unit nA µA V V

* 18

* 7 90 625

* 1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC

* Ta 32

* 6 TC=Ta 28

* 5 IB=

* 40mA

* 35mA

* 30mA

* 25mA

* 4

2SB0967_Panasonic.pdf

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Datasheet Details

Part number:

2SB0967

Manufacturer:

Panasonic

File Size:

62.39 KB

Description:

Silicon pnp epitaxial planar type power transistor.

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