2SB0819 Datasheet - Panasonic Semiconductor

2SB0819 Silicon PNP epitaxial planar type Transistor

www.DataSheet4U.com Transistors 2SB0819 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VE.

2SB0819 Features

* 1 2SB0819 PC  Ta 1.2 IC  VCE Ta = 25°C IB =

* 40 mA

* 35 mA

* 3.5 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V)

* 100 IC / IB = 10 Collector power dissipation PC (W) 1.0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickne

2SB0819 Datasheet (108.22 KB)