Possible to solder the radiation fin directly to printed cicuit board. High collector-emitter voltage VCEO.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
2SB962-Z, Renesas
DATA SHEET
SILICON POWER TRANSISTOR
2SB962-Z
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SB962-Z is designed for Audio Frequency Amplifi.
2SB963, INCHANGE
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB963
DESCRIPTION ·With TO-251(IPAK) packaging ·Very high DC current gain ·Monol.
2SB963-Z, NEC
DATA SHEET
SILICON POWER TRANSISTOR
2SB963-Z
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
DESCRIPTION
The 2SB963-Z is designed for switc.
2SB963-Z, INCHANGE
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB963-Z
DESCRIPTION ·With TO-252(DPAK) packaging ·Very high DC current gain ·Mon.