Part number:
2SK3628
Manufacturer:
TY Semiconductor
File Size:
178.43 KB
Description:
Transistor.
* High-speed switching Low ON resistance Ron + 0 .2 8 .7 -0 .2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratin
2SK3628
TY Semiconductor
178.43 KB
Transistor.
📁 Related Datasheet
2SK362 - N-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK362
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap.
2SK3628 - Silicon N-channel Power MOSFET
(Kexin)
SMD Type
Silicon N-channel Power MOSFET 2SK3628
TO-263
+ 0 .1 1 .2 7 -0 .1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
High-speed .
2SK3628 - Silicon N-channel power MOSFET
(Panasonic)
Power MOSFETs
2SK3628
Silicon N-channel power MOSFET
For hihg-speed switching
15.0±0.3 11.0±0.2
Unit: mm
5.0±0.2 (3.2)
(0.7)
■ Features
• Avalan.
2SK360 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK360
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
MPAK
3 1 2
1. Gate 2. Drain 3. Source
2SK360
Absolute Maximum Ratings (Ta = 25.
2SK3600-01L - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
..
2SK3600-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breado.
2SK3600-01S - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
..
2SK3600-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breado.
2SK3600-01SJ - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
..
2SK3600-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breado.
2SK3600L - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3600L
FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-R.
