IRFML8244TRPBF
TY Semiconductor
276.52kb
Hexfet power mosfet.
TAGS
📁 Related Datasheet
IRFML8244TRPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 97587A
IRFML8244TRPbF
VDS VGS Max RDS(on) max
(@VGS = 10V)
25 ± 20 24 41
V V m m
6 *
HEXFET® Power MOSFET
'
Micro3TM (SOT-23) IRFML8.
IRFM014A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*D.
IRFM044 - N-Channel Power MOSFET
(International Rectifier)
PD-90708D
IRFM044
POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM044
0.04
ID 35A*
60V, N-CHANNEL
HEXFET MOSFET TECH.
IRFM054 - N-CHANNEL POWER MOSFET
(Seme LAB)
IRFM054
MECHANICAL DATA Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.
IRFM064 - POWER MOSFET THRU-HOLE (TO-254AA)
(International Rectifier)
PD - 90875A
POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFM064
IRFM064 60V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
RDS(on)
0.017 Ω.
IRFM110A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFM120A - Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
IRFM120A
BVDSS = 100 V RDS(on) = 0.2 ID = 2.3 A
SOT-223
2
IEEE802.3af Compatible
Avalanche Rugged Technology R.
IRFM120A - Power MOSFET
(ON Semiconductor)
Advanced Power MOSFET
IRFM120A
FEATURES IEEE802.3af Compatible
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc.
IRFM120ATF - N-Channel 100V MOSFET
(VBsemi)
IRFM120ATF-VB
IRFM120ATF-VB Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.100 at VGS = 10 V 100
0.1.
IRFM1310ST - N-CHANNEL POWER MOSFET
(Seme LAB)
IRFM1310ST
MECHANICAL DATA Dimensions in mm (inches)
2 6 .4 2 (1 .0 4 0 ) 2 0 .0 7 (0 .7 9 0 ) 1 3 .7 2 (0 .5 4 0 )
N–CHANNEL POWER MOSFET
VDSS ID(c.
