IRFM110A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFM110A
Manufacturer	Fairchild Semiconductor
File Size	263.83 KB
Description	Advanced Power MOSFET
Datasheet	IRFM110A Datasheet
Additional preview pages of the IRFM110A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ. ) IRFM110A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 1.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C ) Continuous Drain Current (TA=70 C ) Ο.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Oct 27, 2005 |