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IRFM214B Datasheet - Fairchild Semiconductor

IRFM214B 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFM214B Features

* 0.64A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching Improved dv/dt capability D D ! " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

IRFM214B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRFM214B

Manufacturer:

Fairchild Semiconductor

File Size:

692.70 KB

Description:

250v n-channel mosfet.

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IRFM214B IRFM214B 250V N-Channel MOSFET Fairchild Semiconductor

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