* n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current
IRFM250
International Rectifier
196.98 KB
Power mosfet.
PD - 90554E
POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFM250
IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHA.
📁 Related Datasheet
IRFM250 - N-CHANNEL POWER MOSFET
(Seme LAB)
IRFM250
MECHANICAL DATA Dimensions in mm (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.
IRFM250D - N-CHANNEL POWER MOSFET
(Seme LAB)
IRFM250D
MECHANICAL DATA Dimensions in mm (inches)
2 0 .3 2 (.8 0 0 ) 2 0 .0 6 (.7 9 0 )
4 .9 5 (.1 9 5 ) 4 .1 9 (.1 6 5 ) 3 .8 1 (.1 5 0 ) B S C
9 .
IRFM210A - Advanced Power MOSFET
(Fairchild Semiconductor)
..
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FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
IRFM210B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFM210B
November 2001
IRFM210B
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General Description
These N-Channel enhancement mode power field effect transistors are produc.
IRFM214B - 250V N-Channel MOSFET
(Fairchild Semiconductor)
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November 2001
IRFM214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
IRFM220A - Advanced Power MOSFET
(Fairchild Semiconductor)
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FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFM220B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFM220B
November 2001
IRFM220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
IRFM224B - 250V N-Channel MOSFET
(Fairchild Semiconductor)
IRFM224B
November 2001
IRFM224B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
