IRFM220B - 200V N-Channel MOSFET

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Fairchild Semiconductor

Part number	IRFM220B
Manufacturer	Fairchild Semiconductor
File Size	727.80 KB
Description	200V N-Channel MOSFET
Datasheet	IRFM220B Datasheet
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

1.13A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) IRFM220B.

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Published: Oct 27, 2005 |