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IRFM220B 200V N-Channel MOSFET

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Description

IRFM220B November 2001 IRFM220B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number
IRFM220B
Manufacturer
Fairchild Semiconductor
File Size
727.80 KB
Datasheet
IRFM220B_FairchildSemiconductor.pdf
Description
200V N-Channel MOSFET

Features

* 1.13A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS I

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