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IRFM220B Datasheet - Fairchild Semiconductor

IRFM220B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFM220B Features

* 1.13A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS I

IRFM220B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRFM220B

Manufacturer:

Fairchild Semiconductor

File Size:

727.80 KB

Description:

200v n-channel mosfet.

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IRFM220B IRFM220B 200V N-Channel MOSFET Fairchild Semiconductor

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