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IRFM210B Datasheet - Fairchild Semiconductor

IRFM210B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFM210B Features

* 0.77A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

IRFM210B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRFM210B

Manufacturer:

Fairchild Semiconductor

File Size:

705.27 KB

Description:

200v n-channel mosfet.

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IRFM210B IRFM210B 200V N-Channel MOSFET Fairchild Semiconductor

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