Datasheet4U Logo Datasheet4U.com

IRFM210B - 200V N-Channel MOSFET

IRFM210B Description

IRFM210B November 2001 IRFM210B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFM210B Features

* 0.77A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS

📥 Download Datasheet

Preview of IRFM210B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFM240 - N-CHANNEL POWER MOSFET (Seme LAB)
  • IRFM250 - POWER MOSFET (International Rectifier)
  • IRFM250D - N-CHANNEL POWER MOSFET (Seme LAB)
  • IRFM260 - TRANSISTOR N-CHANNEL (International Rectifier)
  • IRFM014A - Power MOSFET (Samsung)
  • IRFM044 - N-Channel Power MOSFET (International Rectifier)
  • IRFM054 - N-CHANNEL POWER MOSFET (Seme LAB)
  • IRFM064 - POWER MOSFET THRU-HOLE (TO-254AA) (International Rectifier)

📌 All Tags

200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFM210B-like datasheet

IRFM210B Stock/Price