IRFM210A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFM210A
Manufacturer	Fairchild Semiconductor
File Size	294.90 KB
Description	Advanced Power MOSFET
Datasheet	IRFM210A Datasheet
Additional preview pages of the IRFM210A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ. ) IRFM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25oC ) Continuous Drain Current (TA=70 oC ) D.

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Published: Dec 25, 2006 |